? document number 88654 www.vishay.com 26-mar-02 1 jan1n6804ueg2 thru jan1n6810ueg2 vishay semiconductors patented* glass passivated rectifiers reverse voltage 50 to 1000v forward current 1.0a formerly 3.95 4.8 .15 .41 0.75 1.60 4.95 5.85 2.0 3.3 2.35 3.5 1.0 1.7 2.3 3.3 0.005 (0.2 max) do-214ba (ueg2) maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. prefix j = jan quality level; prefix jx = jantx quality level parameter symb. jjjjjjj unit 1n6804 1n6805 1n6806 1n6807 1n6808 1n6809 1n6810 device marking code ja jb jc jd je jf jg maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l = 125 ci f(av) 1.0 a peak forward surge current 10 surges of 8.3ms each at 1 min. intervals (per mil-std-750 m 4066) super-imposed i fsm 25 a on i o = 750ma dc; v r = rated v rrm, t a = 100 c typical thermal resistance (1) r jl 25 c/w r ja 80 operating junction and storage temperature range t j ,t stg ? 55 to +175 c barometric pressure hg 8 33 note: (1) thermal resistance measured with devices p.c.b. mounted on 0.2 x 0.2 ? (5.0 x 5.0mm) copper pad areas. features qualified to mil-prf-19500/669 class 1 high temperature metallurgically bonded construction brazed > 600 c cavity-free, glass passivated junction. in epoxy over hermetic glass. high temperature soldering guaranteed: 450 c/5 seconds at teminals ideal for surface mount applications typical i r < 0.1 a built-in strain relief easy pick and place complete device submersible temperature of 265 c for 10 seconds in solder bath mechanical data case: do-214ba, molded epoxy over glass body (ueg2) terminals: solder plated, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 0.0048oz, 0.120g flammability: epoxy is rated ul 94v-0. dimensions in millimeters glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazen-lead assembly by patent no. 3,930,306 and lead forming by p atent no. 5,151,846 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout m i l i t a r y q u a l i f i e d
www.vishay.com document number 88654 2 26-mar-02 jan1n6804ueg2 thru jan1n6810ueg2 vishay semiconductors formerly ratings and characteristic curves (t a = 25 c unless otherwise noted) i f ? instantaneous forward current (a) 10 1 0.1 0.01 0.4 0.6 1.4 1.6 0.8 1.0 1.2 pulse width = 300 s 1% duty cycle t j = 25 c fig. 2 ?typical instantaneous forward characteristics instantaneous forward voltage (v) fig. 1 ?forward current derating curve 0 100 130 110 120 140 150 160 175 average forward rectified current (a) lead temperature ( c) 0.5 1.0 p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 60 h z resistive or inductive load electrical characteristics (t j = 25 c unless otherwise noted) minimum reverse breakdown voltage at 50 av br 55 110 220 440 660 880 1100 v maximum instantaneous forward voltage at 1.0a v f 1.1 v t p = 300 s at 3.0a 1.3 maximum dc reverse current t a = 25 c i r 0.5 a at rated dc blocking voltage t a = 125 c50 typical reverse recovery time at t rr 2.0 s i f = 0.5a, i r = 1.0a, i rr = 0.25 a typical junction capacitance at 4.0v, 1mhz c j 15 pf
document number 88654 www.vishay.com 26-mar-02 3 jan1n6804ueg2 thru jan1n6810ueg2 vishay semiconductors formerly ratings and characteristic curves (t a = 25 c unless otherwise noted) i r ? instantaneous reverse leakage current (ma) fig. 3 typical reverse characteristics 0.1 1 10 0.01 t j = 25 c t j = 100 c 20 0 100 40 60 80 percent of rated peak reverse voltage (%) 110 100 10 30 1 reverse voltage (v) t j = 25 c f = 1.0 mh z v sig = 50mvp-p fig. 4 typical junction capacitance pf ? junction capacitance transient thermal impedance ( c/w) 0.01 110 100 10 100 0.1 0.1 1 t ? pulse duration (sec.) fig. 5 typical transient thermal impedance mounted on 0.2 x 0.27" (5.0 x 7.0mm) copper pad areas
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